Covalent shaping of polyoxometalate molecular films onto ITO electrodes for charge trapping induced resistive switching - Chimie Structurale Organique et Biologique Access content directly
Journal Articles Inorganic Chemistry Frontiers Year : 2024

Covalent shaping of polyoxometalate molecular films onto ITO electrodes for charge trapping induced resistive switching

Abstract

As nano-sized molecular oxides, polyoxometalates (POMs) hold great promise in non-volatile memory materials based on redox-active molecules. Materials processed from solution, by drop-casting, by embedding POMs in polymers, or using Layer-by-Layer deposition techniques have thus been reported and successfully investigated. Almost all these examples are electrostatically assembled materials. We herein propose an original route to the elaboration of robust covalent POM networks, to seek the influence of the shaping process on the POM-to-POM communication and the final device performance. Capitalizing on our experience in the handling of organic-inorganic POM hybrids, we have prepared diazonium hybrids to harness the propensity of diazonium salts to form multi-layered materials upon electrochemical reduction. A few nanometers thick materials have thus been grown onto ITO electrodes and have shown to be potentially suitable for Write-Once-Read-Many (WORM) devices, with a low set voltage.
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Dates and versions

hal-04361172 , version 1 (22-12-2023)

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Raphaël Salles, Wei Church Poh, Maxime Laurans, Florence Volatron, Antoine Miche, et al.. Covalent shaping of polyoxometalate molecular films onto ITO electrodes for charge trapping induced resistive switching. Inorganic Chemistry Frontiers, 2024, 11 (1), pp.255-268. ⟨10.1039/d3qi01761c⟩. ⟨hal-04361172⟩
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