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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Abstract : We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
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https://hal.archives-ouvertes.fr/hal-03051860
Contributor : Jacques Peretti <>
Submitted on : Thursday, December 10, 2020 - 12:56:49 PM
Last modification on : Saturday, December 12, 2020 - 3:59:03 AM
Long-term archiving on: : Thursday, March 11, 2021 - 7:30:53 PM

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Daniel Myers, Andrew Espenlaub, Kristina Gelzinyte, Erin Young, Lucio Martinelli, et al.. Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy. Applied Physics Letters, American Institute of Physics, 2020, 116 (9), pp.091102. ⟨10.1063/1.5125605⟩. ⟨hal-03051860⟩

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