Article Dans Une Revue Journal of Semiconductors Année : 2015

Two-dimensional parasitic capacitance extraction for integrated circuit with dual discrete geometric methods

Résumé

Capacitance extraction is one of the key issues in integrated circuits and also a typical electrostatic problem. The dual discrete geometric method (DGM) is investigated to provide relative solutions in two-dimensional unstructured mesh space. The energy complementary characteristic and quick field energy computation thereof based on it are emphasized. Contrastive analysis between the dual finite element methods and the dual DGMs are presented both from theoretical derivation and through case studies. The DGM, taking the scalar potential as unknown on dual interlocked meshes, with simple form and good accuracy, is expected to be one of the mainstreaming methods in associated areas.

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Dates et versions

hal-01159302 , version 1 (03-06-2015)

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Dan Ren, Xiaoyu Xu, Hui Qu, Zhuoxiang Ren. Two-dimensional parasitic capacitance extraction for integrated circuit with dual discrete geometric methods. Journal of Semiconductors, 2015, 36 (4), pp.045008 ⟨10.1088/1674-4926/36/4/045008⟩. ⟨hal-01159302⟩
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