Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospects, Surface Science, vol.500, issue.1-3, pp.879-903, 2002. ,
DOI : 10.1016/S0039-6028(01)01553-9
Direct electrical detection of hybridization at DNA-modified silicon surfaces, Biosensors and Bioelectronics, vol.19, issue.9, pp.1013-1019, 2004. ,
DOI : 10.1016/j.bios.2003.09.009
-Doped Si(001)-2 ?? 1 Surface: An XPS and STM Study, 34. I. Magid, L. Burstein, O. Seitz, L. Segev, L. Kronik and Y, pp.7686-7693, 2011. ,
DOI : 10.1021/jp201262x
URL : https://hal.archives-ouvertes.fr/hal-00408738
The work function of mercury is 4.5 eV, therefore the system studied by Peng et al. is flatband at zero applied bias To obtain similar band bending as in our case, and compare the interface state density we use their D it value at 0.3V which is 1.6×10 11 interface state per volt and per cm², Phys. Rev. B, vol.101, issue.28, pp.51605-051605, 1983. ,
Atomic Data and Nuclear Data Tables, pp.78-075203, 1985. ,
For a given sample miscut ?, the width of terraces a is expected to be 35 nm, since a=h?tan?, where h is the height of Si(111) step (h = 0.313 nm) This relatively high miscut was not intentional and results from the batch of wafers used for these experiments. 63, 65. Y. Zhang, O. Pluchery, L. Caillard, A.-F. Lamic-Humblot, pp.640-62, 1983. ,