G. Binnig, Atomic-Force Microscopy, Physica Scripta, vol.19, issue.9, pp.930-934, 1986.
DOI : 10.1088/0031-8949/1987/T19A/008

S. Kalinin and A. G. , Scanning probe microscopy: electrical and electromechanical phenomena at the nanoscale, 2007.
DOI : 10.1007/978-0-387-28668-6

W. Melitz, Kelvin probe force microscopy and its application, Surface Science Reports, vol.66, issue.1, pp.1-27, 2011.
DOI : 10.1016/j.surfrep.2010.10.001

J. Alvarez, F. Houze, J. Kleider, M. Liao, and Y. Koide, Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy, Superlattices and Microstructures, vol.40, issue.4-6, pp.343-349, 2006.
DOI : 10.1016/j.spmi.2006.07.027
URL : https://hal.archives-ouvertes.fr/hal-00320298

A. Feijfar, M. Hyvl, M. Ledinski, A. Vetushka, J. Stuchlik et al., Microscopic measurements of variations in local (photo)electronic properties in nanostructured solar cells, Solar Energy Materials and Solar Cells, vol.119, pp.228-234, 2013.
DOI : 10.1016/j.solmat.2013.07.042

J. Alvarez, J. Kleider, F. Houze, and M. Liao, Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy, Diamond and Related Materials, vol.16, issue.4-7, pp.1074-1077, 2007.
DOI : 10.1016/j.diamond.2007.01.038
URL : https://hal.archives-ouvertes.fr/hal-00320360

J. Kleider, J. Alvarez, A. Ankudinov, A. Gudovskikh, E. Gushchina et al., Characterization of silicon heterojunctions for solar cells, Nanoscale Research Letters, vol.6, issue.1, pp.152-162, 2011.
DOI : 10.1186/1556-276X-6-152
URL : https://hal.archives-ouvertes.fr/hal-00555254

H. Li, C. Jiang, W. Metzger, C. Shih, A. et al., Microscopic Real-Space Resistance Mapping Across CdTe Solar Cell Junctions by Scanning Spreading Resistance Microscopy, IEEE Journal of Photovoltaics, vol.5, issue.1, pp.395-400, 2015.
DOI : 10.1109/JPHOTOV.2014.2363569

M. Moczala, N. Sosa, A. Topol, and T. Gotszalk, Investigation of multijunction solar cells using electrostatic force microscopy methods, Ultramicrosc, vol.141, 2014.

Z. Zhang, M. Hetterich, U. Lemmer, M. Powalla, and H. Holschner, Cross sections of operating Cu(In, Ga)Se2thin-film solar cells under defined white light illumination analyzed by Kelvin probe force microscopy, Appl Phys Lett, vol.1021, pp.23903-23913, 2013.

S. Saraf, R. Shikler, J. Yang, and Y. Rosenwaks, Microscopic surface photovoltage spectroscopy, Applied Physics Letters, vol.80, issue.14, pp.2586-2588, 2002.
DOI : 10.1063/1.1468275

L. Borowik, H. Lepage, C. N. Mariolle, D. , and R. O. , Measuring the lifetime of silicon nanocrystal solar cell photo-carriers by using Kelvin probe force microscopy and x-ray photoelectron spectroscopy, Nanotechnology, vol.25, issue.26, pp.265703-265713, 2014.
DOI : 10.1088/0957-4484/25/26/265703

R. Cariou, M. Labrune, P. Roca, and I. Cabarrocas, Thin crystalline silicon solar cells based on epitaxial films grown at 165??C by RF-PECVD, Solar Energy Materials and Solar Cells, vol.95, issue.8, pp.2260-2263, 2011.
DOI : 10.1016/j.solmat.2011.03.038
URL : https://hal.archives-ouvertes.fr/hal-00749873

P. Roca, I. Cabarrocas, R. Cariou, and M. Labrune, Low temperature plasma deposition of silicon thin films: from amorphous to crystalline, J Non-Cryst Solids, vol.358, 2000.
URL : https://hal.archives-ouvertes.fr/hal-00806450

R. Cariou, J. Tang, N. Ramay, R. Ruggeri, P. Roca et al., Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells, Solar Energy Materials and Solar Cells, vol.134, pp.15-21, 2015.
DOI : 10.1016/j.solmat.2014.11.018
URL : https://hal.archives-ouvertes.fr/hal-01230699

P. Kapur, M. Moslehi, A. Deshpande, R. V. Kramer, J. Seutter et al., A manufacturable, non-plated, non-Ag metallization based 20.44% efficient, 243 cm 2 area, back contacted solar cell on 40 ?m thick mono-crystalline silicon, 28th European Photovoltaic Solar Energy Conference and Exhibition Proceedings 2013, p.2228, 2013.

F. Houze, R. Meyer, O. Schneegans, and L. Boyer, Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes, Applied Physics Letters, vol.69, issue.13, pp.1975-1977, 1996.
DOI : 10.1063/1.117179

L. Weber, M. Lehr, and E. Gmelin, Electrical properties of silicon point contacts, Physical Review B, vol.43, issue.5, pp.4317-4322, 1991.
DOI : 10.1103/PhysRevB.43.4317

L. Kronik and Y. Shapira, Surface photovoltage phenomena: theory, experiment, and applications, Surface Science Reports, vol.37, issue.1-5, pp.1-205, 1999.
DOI : 10.1016/S0167-5729(99)00002-3

S. Barbet, M. Popoff, H. Diesinger, D. Deresmes, D. Théron et al., Cross-talk artefacts in Kelvin probe force microscopy imaging: A comprehensive study, Journal of Applied Physics, vol.115, issue.14, 2014.
DOI : 10.1063/1.4870710
URL : https://hal.archives-ouvertes.fr/hal-00981142

A. Kikukawa, H. Hosaka, and R. Imura, junction imaging and characterizations using sensitivity enhanced Kelvin probe force microscopy, Applied Physics Letters, vol.66, issue.25, 1995.
DOI : 10.1063/1.113780

A. Vetushka, A. Fejfar, M. Ledinský, B. Rezek, J. Stuchlík et al., Comment on ???Current routes in hydrogenated microcrystalline silicon???, Physical Review B, vol.81, issue.23, 2010.
DOI : 10.1103/PhysRevB.81.237301