Multilayer silicene: clear evidence of Ag-terminated bulk silicon
Résumé
The existence of silicite, a new allotrope of silicon based on a stacking of hexagonal silicene planes is one of the most discussed topic in the field of 2D materials. Using grazing incidence X-ray diffraction (GIXD), we have followed in situ the growth of Si films on Ag(111) in the low temperature growth regime (510-520 K). GIXD experiments demonstrate that Si films have a diamond-like structure, with an averaged lattice constant slightly different from bulk Si. The diffracted intensities associated with the Si films are well reproduced by the Ag/Si(111) (sqrt(3)xsqrt(3))R30° honeycomb chain model, whereas models with Ag-free Si surfaces fail to reproduce the experimental data.
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