BSIM3 parameters extraction of a 0.35 µm CMOS technology from 300K down to 77K
Résumé
In this work, we present a commercial 0.35 μm/3.3 V CMOS technology behaviour study of both linear and gate-enclosed transistors from room temperature down to 77 Kelvin. Cryogenic setup used to complete this study is first described. Measurement results are then discused and a model based on a BSIM3 parameters extraction is proposed.