D. J. Lockwood, Towards Silicon-Based Photonic Integrated Circuits: The Quest for Compatible Light Sources, ECS Trans, vol.89, pp.3-35, 2019.

X. Zhang, H. Li, G. Cao, M. Xiao, G. Guo et al., Semiconductor quantum computation, Nat. Sci. Rev, vol.6, pp.32-54, 2018.

M. K. Choi, J. Yang, T. Hyeon, and D. Kim, Flexible quantum dot light-emitting diodes for next-generation displays, NPJ Flexible Electronics, vol.2, p.10, 2018.

T. S. Santana, Y. Ma, R. N. Malein, F. Bastiman, E. Clarke et al., Generating indistinguishable photons from a quantum dot in a noisy environment, Phys. Rev. B, vol.95, p.201410, 2017.

J. Brault, S. Matta, T. Ngo, D. Rosales, M. Leroux et al., Ultraviolet light emitting diodes using III-N quantum dots, Mat. Sci. Semicond. Proces, vol.55, pp.95-101, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01390773

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo et al., Advances in group IIInitride-based deep UV light-emitting diode technology, Semicond. Sci. Technol, p.14036, 2010.

L. Wang, L. Wang, J. Yu, Z. Hao, Y. Luo et al., Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices, ACS Applied Materials & Interfaces, vol.11, pp.1228-1238, 2019.

I. N. Stranski and L. Krastanov, Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander, Ber. Akad. Wiss. Wien, Mater., Math.-Nat. Kl. IIb, p.797, 1938.

I. V. Markov, Crystal Growth for Beginners, 2003.

J. Aqua, I. Berbezier, L. Favre, T. Frisch, and A. Ronda, Growth and self-organization of SiGe nanostructures, Phys. Rep, vol.522, pp.59-189, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01238960

S. Kiravittaya, A. Rastelli, and O. G. Schmidt, Advanced quantum dot configurations, Rep. Prog. Phys, p.46502, 2009.

M. Kneissl, T. Y. Seong, J. Han, and H. Amano, The emergence and prospects of deepultraviolet light-emitting diode technologies, Nat. Photon, vol.13, pp.233-244, 2019.

J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville et al.,

, Semicond. Sci. Technol, vol.29, p.84001, 2014.

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet et al., Radiative lifetime of a single electron hole pair in GaN/AlN quantum dots, Phys. Rev. B, p.113304, 2006.
URL : https://hal.archives-ouvertes.fr/hal-01304534

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre et al., Tailoring the shape of GaN/Al x Ga 1?x N nanostructures to extend their luminescence in the visible range, J. Appl. Phys, p.33519, 2009.

N. Grandjean and J. Massies, GaN and Al x Ga 1?x N molecular beam epitaxy monitored by reflection high-energy electron diffraction, Appl. Phys. Lett, vol.71, pp.1816-1818, 1997.

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre et al., Blue-light emission from GaN/Al 0.5 Ga 0.5 N quantum dots, Appl. Phys. Lett, p.51911, 2008.

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès et al.,

, J. Appl. Phys, p.84318, 2011.

B. Damilano, J. Brault, and J. Massies, Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source, J. Appl. Phys, vol.118, p.24304, 2015.

N. Grandjean, J. Massies, F. Semond, S. Y. Karpov, and R. A. Talalaev, GaN evaporation in molecular-beam epitaxy environment, Appl. Phys. Lett, vol.74, pp.1854-1856, 1999.

J. Brault, S. Matta, T. Ngo, M. Korytov, D. Rosales et al., Investigation of Al y Ga1 ? yN/Al 0.5 Ga 0.5 N quantum dot properties for the design of ultraviolet emitters, Japan. J. Appl. Phys, pp.5-06, 2016.

M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault et al., Effects of capping on GaN quantum dots deposited on Al 0

, Appl. Phys. Lett, p.143105, 2009.

M. Korytov, J. A. Budagosky, J. Brault, T. Huault, M. Benaissa et al., Mechanism of GaN quantum dot overgrowth by Al 0.5 Ga 0.5 N: Strain evolution and phase separation, J. Appl. Phys, p.84309, 2012.

B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies, Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication, Nano Lett, vol.16, pp.1863-1868, 2016.

B. Damilano, P. Coulon, S. Vézian, V. Brändli, J. Duboz et al., Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation, Appl. Phys. Express, vol.12, p.45007, 2019.
URL : https://hal.archives-ouvertes.fr/hal-02304928

J. Kim, D. Elmaghraoui, M. Leroux, M. Korytov, P. Vennéguès et al., Strain-and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition, Nanotechnol, p.305703, 2014.

B. J. Spencer, P. W. Voorhees, and S. H. Davis, Morphological Instability in Epitaxially Strained Dislocation-Free Solid Films, Phys. Rev. Lett, vol.67, pp.3696-3699, 1991.

J. Aqua, T. Frisch, and A. Verga, Ordering of strained islands during surface growth, Phys. Rev. E, p.21605, 2010.

J. Aqua, T. Frisch, and A. Verga, Nonlinear evolution of a morphological instability in a strained epitaxial film, Phys. Rev. B, p.165319, 2007.
URL : https://hal.archives-ouvertes.fr/hal-00203042

J. Aqua, A. Gouyé, T. Auphan, T. Frisch, and A. Ronda, Berbezier, I. Orientation dependence of the elastic instability on strained SiGe films, Appl. Phys. Lett, p.98, 2011.

R. Leon, C. Lobo, J. Zou, T. Romeo, and D. J. Cockayne, Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation, Phys. Rev. Lett, vol.81, pp.2486-2489, 1998.

T. Walther, A. G. Cullis, D. J. Norris, and M. Hopkinson, Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs, Phys. Rev. Lett, p.2381, 2001.

X. Xu, J. Aqua, and T. Frisch, Growth kinetics in a strained crystal film on a wavy patterned substrate, J. Phys. : Condens. Matter, vol.24, p.45002, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01239018

. Xu, Growth of quantum dots on pit-patterns, Surf. Sci, vol.20, p.639, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01238936

J. Aqua, L. Favre, A. Ronda, A. Benkouider, and I. Berbezier, Configurable Compliant Substrates for SiGe Nanomembrane Fabrication, Cryst. Growth Des, vol.15, pp.3399-3406, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01473070

S. Einfeldt, V. Kirchner, H. Heinke, M. Dießelberg, S. Figge et al., Hommel, D. Strain relaxation in AlGaN under tensile plane stress, J. Appl. Phys, vol.88, pp.7029-7036, 2000.

A. Ben-amar, M. Faucher, V. Brandli, Y. Cordier, and D. Théron, Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application, Phys. Stat. Sol. (a), vol.211, pp.1655-1659, 2014.

J. L. Rouvière, J. Simon, N. Pelekanos, B. Daudin, and G. Feuillet, Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations, Appl. Phys. Lett, vol.75, pp.2632-2634, 1999.