A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor - Sorbonne Université
Communication Dans Un Congrès Année : 2019

A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor

Domaines

Electromagnétisme

Pascal Gomez  : Connectez-vous pour contacter le contributeur

https://hal.sorbonne-universite.fr/hal-03167523

Soumis le : vendredi 12 mars 2021-10:43:10

Dernière modification le : mercredi 30 octobre 2024-13:28:18

Fichier non déposé

Dates et versions

hal-03167523 , version 1 (12-03-2021)

Identifiants

  • HAL Id : hal-03167523 , version 1

Citer

Jiajia Chen, Shiyou Yang, Zhuoxiang Ren. A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor. Conference COMPUMAG 2019, Jul 2019, Paris, France. ⟨hal-03167523⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

GEEPS L2E SORBONNE-UNIVERSITE SU-SCIENCES GEEPS-ELECTRONIQUE INSTITUT-SCIENCES-LUMIERE
44 Consultations
0 Téléchargements

Partager

More