A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor - Sorbonne Université
Conference Papers Year : 2019

A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor

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Electromagnetism

Pascal Gomez  : Connect in order to contact the contributor

https://hal.sorbonne-universite.fr/hal-03167523

Submitted on : Friday, March 12, 2021-10:43:10 AM

Last modification on : Monday, September 9, 2024-3:40:04 PM

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hal-03167523 , version 1 (12-03-2021)

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  • HAL Id : hal-03167523 , version 1

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Jiajia Chen, Shiyou Yang, Zhuoxiang Ren. A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor. Conference COMPUMAG 2019, Jul 2019, Paris, France. ⟨hal-03167523⟩

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GEEPS L2E SORBONNE-UNIVERSITE SU-SCIENCES GEEPS-ELECTRONIQUE INSTITUT-SCIENCES-LUMIERE
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