Comparison between metal and electrolyte/(III–V) semiconductor interfaces
Résumé
Barrier formation at III–V semiconductor (SC)/redox electrolyte junctions is studied. It is found that the Fermi-level pinning due to the redox species in solution is much weaker than that evidenced for solid Schottky barriers. It is also shown that corrosion by water is able to pin the Fermi level of the SC; this is the main difficulty to compare SC/liquid and SC/metal interfaces.