Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 1986

Comparison between metal and electrolyte/(III–V) semiconductor interfaces

Philippe Allongue
  • Fonction : Auteur

Résumé

Barrier formation at III–V semiconductor (SC)/redox electrolyte junctions is studied. It is found that the Fermi-level pinning due to the redox species in solution is much weaker than that evidenced for solid Schottky barriers. It is also shown that corrosion by water is able to pin the Fermi level of the SC; this is the main difficulty to compare SC/liquid and SC/metal interfaces.

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Chimie

Dates et versions

hal-04661038 , version 1 (24-07-2024)

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Philippe Allongue, Hubert Cachet. Comparison between metal and electrolyte/(III–V) semiconductor interfaces. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1986, 168 (1-3), pp.356-364. ⟨10.1016/0039-6028(86)90865-4⟩. ⟨hal-04661038⟩
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