High speed universal NAND gate based on weakly coupled RF MEMS resonators - Sorbonne Université
Article Dans Une Revue Microsystem Technologies Année : 2024

High speed universal NAND gate based on weakly coupled RF MEMS resonators

Mahdi Attar
  • Fonction : Auteur
Reza Askari Moghadam

Résumé

Logical gates have been used in implementation of logic sequential and combinational circuits especially in computers, DSPs and microprocessors. They are mostly fabricated based on CMOS technology that provides a few nano-seconds of delay for each digital gate. Due to limitations in more scaling CMOS transistors and cause of short channel effects, some engineers and researchers believe that there is a huge demand for new devices and fabrication technologies to produce faster logic gates. In this paper, a new architecture for NAND gate is presented which operates based on mechanical resonance of a network of weakly coupled resonators that resonate in radio frequencies. This design is achieved by employing the associative memory property of Hopfield neural networks and the theory of weakly coupled resonators. The main advantage of the proposed design is in its capability to reach out delay times of the order of 1 nano-seconds or even less. One solution to decrease the delay time can be increasing the resonance frequency of resonators which are processing elements of resonators network. In this paper just the new idea of implementation NAND gate based on weakly coupled RF MEMS resonators is presented and evaluated. Other criteria like gate power consumption, effects of temperature, fan in, fan out and noise margin are not discussed. Regarding the rapid growth in MEMS technology, resonators with super high frequency (SHF 3–30 GHz) are now available and those with Extremely High frequency (EHF 30–300 GHz) will soon be in market which enables the presented design to achieve higher speeds. In addition, mechanical resonators are more fault tolerant than CMOS circuits when utilized in harsh environments which exposed to ionic beams or electron beam radiations. In space applications, the satellite and payload are exposed to huge bombardments of space electrons and ions beams. So, the proposed NAND gate can be a good solution for enhancing reliability of devices and systems exposed to space radiations.
Fichier principal
Vignette du fichier
Microsystem- Reza ASKARI MOGHADAM.pdf (1.76 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04704939 , version 1 (23-09-2024)

Identifiants

Citer

Mahdi Attar, Reza Askari Moghadam. High speed universal NAND gate based on weakly coupled RF MEMS resonators. Microsystem Technologies, 2024, 30 (3), pp.319-329. ⟨10.1007/s00542-024-05614-1⟩. ⟨hal-04704939⟩
23 Consultations
6 Téléchargements

Altmetric

Partager

More