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Journal Articles Applied Physics Letters Year : 2008

GaNAsSb material for ultrafast microwave photoconductive switching application

Abstract

We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 μm thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb. The switch exhibits pulsed response with full width at half maximum of 30 ps and photoresponse of up to 1.6 μm. In microwave switching application, the switch shows ON/OFF ratio of 11 dB at 1 GHz and response up to 15 GHz.
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Dates and versions

hal-00580735 , version 1 (29-03-2011)

Identifiers

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Kian Hua Tan, Sonn Fatt Yoon, Charlotte Tripon-Canseliet, Wan Khai Loke, Satrio Wicaksono, et al.. GaNAsSb material for ultrafast microwave photoconductive switching application. Applied Physics Letters, 2008, 93 (6), pp.063509. ⟨10.1063/1.2971204⟩. ⟨hal-00580735⟩
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