Gallium nitride based plasmonic multilayer operating at 1.55µm

Abstract : In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately by theoretical tools using the Maxwell equations. Technological fabrication of the device and its experimental characterizations using an evanescent coupling configuration was performed: the results have confirmed the existence of SPR associated to a sharp width response. This study could be a first step in the design of new plasmonic-semiconductor-based optical devices such as modulators and switches.
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Article dans une revue
Optics Letters, Optical Society of America, 2012, 37 (15), pp.3039 - 3041. 〈10.1364/OL.37.003039〉
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https://hal.sorbonne-universite.fr/hal-00751481
Contributeur : Pascal Gomez <>
Soumis le : mardi 13 novembre 2012 - 15:19:26
Dernière modification le : jeudi 18 octobre 2018 - 01:23:14

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Arnaud Stolz, Laurence Considine, Salim Faci, Eladj Dogheche, Charlotte Tripon-Canseliet, et al.. Gallium nitride based plasmonic multilayer operating at 1.55µm. Optics Letters, Optical Society of America, 2012, 37 (15), pp.3039 - 3041. 〈10.1364/OL.37.003039〉. 〈hal-00751481〉

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