Coplanar-PGL Transitions on High Resistivity Silicon Substrate in the 57-64 GHz Band and Influence of the Probe Station on the Performances

Marjorie Grzeskowiak 1 Julien Emond 1 Gaelle Lissorgues 1 Stéphane Protat 1 Frédérique Deshours 2 Elodie Richalot 1 Odile Picon 1
1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
2 L2E - Laboratoire d'Electronique et Electromagnétisme
Abstract : We present Coplanar-Planar Goubau Line (PGL) transitions designed on high-resistivity Silicon to characterize a PGL using microwave probing. These transitions are optimized in the 57-64 GHz frequency band to present excellent electrical performances despite the field disturbance of the measurement setup. As the transitions are positioned on a probe station chuck, a glass substrate is added between the transition under test and the metallic chuck to minimize the disturbance. 3-D full-wave electromagnetic field simulations performed on a commercial software and on-wafer measurements show almost comparable results in term of scattering matrix parameters. Low losses are attained with a measured average transmission parameter of 2.5 dB at 60 GHz for a length of 8 mm of a back-to-back structure with the transitions at the extremities. The measured average insertion loss and return loss per transition are better than 1.36 dB and 11 dB, respectively, with a bandwidth greater than 7% at 60 GHz for a length of 1 mm (about a half of the wavelength at 60 GHz).
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https://hal.sorbonne-universite.fr/hal-00932475
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Submitted on : Friday, January 17, 2014 - 10:52:59 AM
Last modification on : Thursday, March 21, 2019 - 2:44:19 PM

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Marjorie Grzeskowiak, Julien Emond, Gaelle Lissorgues, Stéphane Protat, Frédérique Deshours, et al.. Coplanar-PGL Transitions on High Resistivity Silicon Substrate in the 57-64 GHz Band and Influence of the Probe Station on the Performances. Progress In Electromagnetics Research M, EMW Publishing, 2014, 34, pp.79-87. ⟨10.2528/PIERM13110704⟩. ⟨hal-00932475⟩

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