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In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)

Abstract : Most studies on MnAs material in its bulk form have been focused on its temperature-dependent structural phase transition accompanied by a magnetic one. Magnetostructural phase transition parameters in thin MnAs films grown on substrates present however some differences from the bulk behavior, and local studies become mandatory for a deeper understanding of the mechanisms involved within the transition. Up to now, only surface techniques have been carried out, while the transition is a three-dimensional phenomenon. We therefore developed an original nanometer scale methodology using electron holography to investigate the phase transition in an epitaxial MnAs thin film on GaAs(001) from the cross-section view. Using quantitative magnetic maps recorded at the nanometer scale as a function of the temperature, our work provides a direct in situ observation of the inhomogeneous spatial distribution of the transition in the layer depth and brings new insights on the fundamental transition mechanisms.
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Submitted on : Monday, February 12, 2018 - 10:38:37 AM
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Christophe Gatel, Xiaoxiao Fu, Virginie Serin, M. Eddrief, Victor H. Etgens, et al.. In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001). Nano Letters, American Chemical Society, 2017, 17 (4), pp.2460-2466. ⟨10.1021/acs.nanolett.7b00144⟩. ⟨hal-01508981⟩

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