Nitrogen-Doped Carbon Quantum Dots on Graphene for Field-Effect Transistor Optoelectronic Memories † - Sorbonne Université Access content directly
Journal Articles Advanced Electronic Materials Year : 2023

Nitrogen-Doped Carbon Quantum Dots on Graphene for Field-Effect Transistor Optoelectronic Memories †

Abstract

The development of field-effect transistor-based (FET-based) non-volatile optoelectronic memories is vital toward innovations necessary to improve computer systems. In this work, for the first time, the unique charge-trapping and charge-retention properties of solution-processed colloidal nitrogen-doped carbon quantum dots (CQDs) are harnessed to achieve functional optoelectronic memories programmable by UV illumination with a multilevel writing possibility. Of particular note, long-lasting memory function can be achieved thanks to the vast charge trapping sites provided by the N-doped CQDs and the resultant photo-gating effect is exercised on the graphene FET. The achieved memory can be erased by a positive gate bias which provides sufficient carriers to remove trapped charges through recombination. This study highlights the possibility to engineer high-performance all-carbon non-volatile FET-based optoelectronic memories through manipulating and coupling the charge-trapping properties of colloidal CQDs and graphene.
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Dates and versions

hal-04130405 , version 1 (15-06-2023)

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Mahima Chaudhary, Chenghao Xin, Zhelu Hu, Dongjiu Zhang, Guillaume Radtke, et al.. Nitrogen-Doped Carbon Quantum Dots on Graphene for Field-Effect Transistor Optoelectronic Memories †. Advanced Electronic Materials, In press, 9 (8), pp.2300159. ⟨10.1002/aelm.202300159⟩. ⟨hal-04130405⟩
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