Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films - Sorbonne Université Access content directly
Journal Articles Solid State Communications Year : 2008

Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films

Abstract

Amorphous carbon nitride films were grown by reactive radio-frequency (RF) magnetron sputtering of a high-purity graphite target in argon/nitrogen (Ar/ ) gas mixture. The total discharge pressure was 1 Pa and the total nitrogen partial pressure (NPP) in plasma was between 0 and 0.10%. The properties of films were determined using X-ray photoelectron spectroscopy (XPS), infrared absorption, and transmission spectroscopy. The electrical resistivity of films was studied as a function of temperature between 110 and 573 K. The optical gap varies from 0.30 to 0.7 eV in the range of the studied N content in good agreement with the resistivity measurements. The two types of conduction mechanisms can be interpreted basis on the band structure model of the electrons in a disordered carbon with the presence of localized states.

Dates and versions

hal-04137660 , version 1 (22-06-2023)

Identifiers

Cite

F. Alibart, O. Durand Drouhin, Catherine Debiemme-Chouvy, M. Benlahsen. Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films. Solid State Communications, 2008, 145 (7-8), pp.392-396. ⟨10.1016/j.ssc.2007.11.025⟩. ⟨hal-04137660⟩
8 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More