Electrodeposition of Epitaxial ZnSe Films on InP and GaAs from an Aqueous Zinc Sulfate–Selenosulfate Solution - Sorbonne Université Access content directly
Journal Articles Advanced Materials Year : 2002

Electrodeposition of Epitaxial ZnSe Films on InP and GaAs from an Aqueous Zinc Sulfate–Selenosulfate Solution

Abstract

Epitaxial growth of ZnSe thin films on InP(111) and GaAs(100) substrates has been achieved by electrodeposition from a zinc sulfate/selenosulfate solution. The deposition was observed over a wide range of applied potentials (–1.6–1.9 V vs. mercury/mercury sulfate). The epitaxy was characterized by reflective high energy electron diffraction (see Figure for a ZnSe epitaxial layer) and grazing angle X-ray diffraction.

Dates and versions

hal-04219867 , version 1 (27-09-2023)

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G. Riveros, J.F. Guillemoles, Daniel Lincot, H. Gomez Meier, Michel Froment, et al.. Electrodeposition of Epitaxial ZnSe Films on InP and GaAs from an Aqueous Zinc Sulfate–Selenosulfate Solution. Advanced Materials, 2002, 14 (18), pp.1286-1290. ⟨10.1002/1521-4095(20020916)14:18<1286::AID-ADMA1286>3.0.CO;2-Q⟩. ⟨hal-04219867⟩
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