Heteroepitaxy of electrodeposited CdSe on (100) InP and GaAs single crystals - Sorbonne Université Access content directly
Journal Articles Thin Solid Films Year : 2001

Heteroepitaxy of electrodeposited CdSe on (100) InP and GaAs single crystals

Abstract

Epitaxial CdSe films have been electrodeposited on the (100) face of InP and GaAs single crystals. The quality of the epitaxy and chemical composition of CdSe films have been investigated by reflection high-energy electron diffraction, X-ray diffraction and XPS measurements. A good stability of the InP and GaAs surfaces, in presence of the deposition electrolytes, was found. The choice of the deposition parameters is crucial for the growth of epitaxial and stoichiometric layers.

Dates and versions

hal-04237565 , version 1 (11-10-2023)

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Luc Beaunier, Hubert Cachet, Robert Cortes, Michel Froment, A Etcheberry. Heteroepitaxy of electrodeposited CdSe on (100) InP and GaAs single crystals. Thin Solid Films, 2001, 387 (1-2), pp.108-110. ⟨10.1016/S0040-6090(00)01843-5⟩. ⟨hal-04237565⟩
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