Epitaxial electrodeposition of CdTe films on InP from aqueous solutions: Role of a chemically deposited CdS intermediate layer - Sorbonne Université Access content directly
Journal Articles Applied Physics Letters Year : 1995

Epitaxial electrodeposition of CdTe films on InP from aqueous solutions: Role of a chemically deposited CdS intermediate layer

Abstract

Epitaxial (111) CdTe films have been grown on (1̄ 1̄ 1̄) InP single crystals by one step electrodeposition in aqueous acidic solution, at a temperature of 85 °C, and a growth rate of about 0.7 μm h−1. Reflexion high-energy electron diffraction and five-circle x-ray diffraction techniques have been used to characterize the interface structure and epitaxial quality. The epitaxy of CdTe (fcc a=6.49 Å) takes place with a direct continuation of the InP lattice (fcc a=5.87 Å), with no rotation of the respective crystallographic directions. The epitaxy is markedly improved when the InP substrate is covered with a thin film (20–30 nm) of epitaxial CdS grown by chemical bath deposition which acts as an interfacial buffer layer.
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hal-04443298 , version 1 (07-02-2024)

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Daniel Lincot, A. Kampmann, B. Mokili, J. Vedel, Robert Cortes, et al.. Epitaxial electrodeposition of CdTe films on InP from aqueous solutions: Role of a chemically deposited CdS intermediate layer. Applied Physics Letters, 1995, 67 (16), pp.2355-2357. ⟨10.1063/1.114343⟩. ⟨hal-04443298⟩
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