Thermally stable low resistance ohmic contacts to n -type gallium arsenide: Magnetron cathodic sputter-deposited NiInW contacts - Sorbonne Université Access content directly
Journal Articles Applied Physics Letters Year : 1991

Thermally stable low resistance ohmic contacts to n -type gallium arsenide: Magnetron cathodic sputter-deposited NiInW contacts

Abstract

W/Ni0.9-In0.1 refractory ohmic contacts presenting low specific resistivity have been formed on n-type GaAs by magnetron cathodic sputtering and subsequently annealed by rapid thermal processing at 850 °C for 10 s. The increase of Ni-In film thickness (with a W layer of 80 nm) stimulated the Schottky-to-ohmic behavior conversion with a minimum specific resistivity value of 10−5 Ω cm2. By increasing the W layer thickness to 160 nm, the specific resistivity was dropped to a minimum value of 10−6 Ω cm2. Such a low value was attributed to the presence of InGaAs phase. The W/Ni0.9-In0.1 contact showed excellent thermal stability at 400 °C and during 100 h.
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Dates and versions

hal-04559174 , version 1 (25-04-2024)

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Cite

M. Hugon, B. Agius, F. Varniere, C. Dubon-Chevallier, J. Bresse, et al.. Thermally stable low resistance ohmic contacts to n -type gallium arsenide: Magnetron cathodic sputter-deposited NiInW contacts. Applied Physics Letters, 1991, 58 (24), pp.2773-2775. ⟨10.1063/1.104782⟩. ⟨hal-04559174⟩
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