In-Phase Power-Combined Frequency Triplers at 300 GHz - Sorbonne Université
Journal Articles IEEE Microwave and Wireless Components Letters Year : 2008

In-Phase Power-Combined Frequency Triplers at 300 GHz

Abstract

We report on the design, fabrication and characterization of a 300 GHz Schottky-diode frequency tripler made of two mirror-image integrated circuits that are power-combined in-phase in a single waveguide block using compact Y-junctions at the input and output waveguides. Each chip features six anodes on a 5 μm thick GaAs membrane. The tripler has 5-15% conversion efficiency measured across the 265-330 GHz band when driven with 50-250 mW of input power at room temperature. At 318 GHz it delivers a peak power of 26 mW with 11% conversion efficiency. The power-combined frequency multiplier is compared with a single-chip tripler designed for the same band using the same integrated circuit.
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Dates and versions

hal-00609917 , version 1 (20-07-2011)

Identifiers

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Alain Maestrini, John S. Ward, Charlotte Tripon-Canseliet, John J. Gill, Choonsup Lee, et al.. In-Phase Power-Combined Frequency Triplers at 300 GHz. IEEE Microwave and Wireless Components Letters, 2008, 18 (3), pp.218 - 220. ⟨10.1109/LMWC.2008.916820⟩. ⟨hal-00609917⟩
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