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Conference Papers Year : 2009

Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications

Salim Faci

Abstract

This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3µm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55µm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWHM of 30ps and photoresponse of up to 1.6µm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ~330mV lower than that of a conventional AlGaAs/GaAs HBT.

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Electronics
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Dates and versions

hal-00620077 , version 1 (07-09-2011)

Identifiers

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Sonn Fatt Yoon, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Kim Luong Lew, et al.. Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications. 215th ECS Meeting, May 2009, San francisco, United States. pp.5 - 29, ⟨10.1149/1.3120682⟩. ⟨hal-00620077⟩
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