Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications
Sonn Fatt Yoon
(1)
,
Kian Hua Tan
(1)
,
Wan Khai Loke
(1)
,
Satrio Wicaksono
(1)
,
Kim Luong Lew
(1)
,
Tien Khee Ng
(1)
,
Zhe Xu
(1)
,
Y. K. Sim
(1)
,
Andreas Stöhr
(2)
,
Sascha Fedderwitz
(2)
,
Mario Weiss
(2)
,
Okan Ecin
(2)
,
Arthur Poloczek
(2)
,
Andrei Malcoci
(2)
,
Dieter Jäger
(2)
,
Naïma Saadsaoud
(3)
,
El Hadj Dogheche
(3)
,
Malek Zegaoui
(3)
,
Jean-Francois Lampin
(3)
,
Didier Decoster
(3)
,
Charlotte Tripon-Canseliet
(4)
,
Salim Faci
(4)
,
Jean Chazelas
(5)
,
James A. Gupta
(6)
,
Sean P. Mcalister
(6)
1
EEE -
School of Electrical and Electronic Engineering
2 Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 L2E - Laboratoire d'Electronique et Electromagnétisme
5 THALES Airborne Systems [Elancourt]
6 NRC - IMS - Institute for Microstructural Sciences
2 Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 L2E - Laboratoire d'Electronique et Electromagnétisme
5 THALES Airborne Systems [Elancourt]
6 NRC - IMS - Institute for Microstructural Sciences
El Hadj Dogheche
- Fonction : Auteur
- PersonId : 747917
- IdHAL : elhadj-dogheche
Malek Zegaoui
- Fonction : Auteur
- PersonId : 1263357
- IdHAL : malek-zegaoui
Jean-Francois Lampin
- Fonction : Auteur
- PersonId : 742765
- IdHAL : jean-francois-lampin
- ORCID : 0000-0001-8309-8178
- IdRef : 119595680
Didier Decoster
- Fonction : Auteur
- PersonId : 748127
- IdHAL : didier-decoster
Charlotte Tripon-Canseliet
- Fonction : Auteur
- PersonId : 1234386
- IdHAL : charlotte-tripon-canseliet
- ORCID : 0000-0002-1187-506X
Salim Faci
- Fonction : Auteur
- PersonId : 177989
- IdHAL : salim-faci
- ORCID : 0000-0002-6409-0223
- IdRef : 123169917
Résumé
This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3µm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55µm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWHM of 30ps and photoresponse of up to 1.6µm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ~330mV lower than that of a conventional AlGaAs/GaAs HBT.