Microwave On/Off ratio enhancement of GaAs photoconductive switches at nanometer scale

Abstract : This paper reports on performances enhancement of photoconductive switches in term of On/Off ratio and insertion losses. The optimization parameters on which the research has been focused are gap dimensions reduction to nanometer scale. The device characterization results up to a microwave frequency of 40 GHz and under CW illumination at a wavelength of 800 nm are presented. On/Off ratio reveals a value of 13 dB at 20 GHz under 100 mW optical power.
Type de document :
Article dans une revue
IEEE Aerospace and Electronic Systems Magazine, Institute of Electrical and Electronics Engineers, 2012, 30 (23), pp.3576 - 3579. 〈10.1109/JLT.2012.2223196〉
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https://hal.sorbonne-universite.fr/hal-00751429
Contributeur : Pascal Gomez <>
Soumis le : mardi 13 novembre 2012 - 14:14:27
Dernière modification le : jeudi 18 octobre 2018 - 01:25:15

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Charlotte Tripon-Canseliet, Salim Faci, Antoine Pagies, Vincent Magnin, Stéphane Formont, et al.. Microwave On/Off ratio enhancement of GaAs photoconductive switches at nanometer scale. IEEE Aerospace and Electronic Systems Magazine, Institute of Electrical and Electronics Engineers, 2012, 30 (23), pp.3576 - 3579. 〈10.1109/JLT.2012.2223196〉. 〈hal-00751429〉

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