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Journal Articles IEEE Aerospace and Electronic Systems Magazine Year : 2012

Microwave On/Off ratio enhancement of GaAs photoconductive switches at nanometer scale

Abstract

This paper reports on performances enhancement of photoconductive switches in term of On/Off ratio and insertion losses. The optimization parameters on which the research has been focused are gap dimensions reduction to nanometer scale. The device characterization results up to a microwave frequency of 40 GHz and under CW illumination at a wavelength of 800 nm are presented. On/Off ratio reveals a value of 13 dB at 20 GHz under 100 mW optical power.
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Dates and versions

hal-00751429 , version 1 (13-11-2012)

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Charlotte Tripon-Canseliet, Salim Faci, Antoine Pagies, Vincent Magnin, Stéphane Formont, et al.. Microwave On/Off ratio enhancement of GaAs photoconductive switches at nanometer scale. IEEE Aerospace and Electronic Systems Magazine, 2012, 30 (23), pp.3576 - 3579. ⟨10.1109/JLT.2012.2223196⟩. ⟨hal-00751429⟩
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