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Article Dans Une Revue Energy Procedia Année : 2015

Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells

Résumé

We present here a study of the recombination at the hetero-interface of solar cells based on amorphous silicon / crystalline silicon (a-Si:H/c-Si). The volume defects in the amorphous silicon are modeled with the defect-pool model and we study whether the surface defects in c-Si at the a-Si:H/c-Si interface can be considered as a projection of the defects in a-Si:H close to the surface. We study the impact of the defect-pool model parameters on the surface defect density and on the effective lifetime. We show that the calculation of interface defects from the defect-pool model is compatible with experimental results only if the width of the valence band tail is decreased when the thickness of the buffer layer is increased.
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Dates et versions

hal-01188802 , version 1 (31-08-2015)

Licence

Paternité - Pas d'utilisation commerciale - Pas de modification

Identifiants

Citer

David Reaux, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Impact of defect-pool model parameters on the lifetime in c-Si/a-Si:H heterojunction solar cells. Energy Procedia, 2015, 77, pp.153-158. ⟨10.1016/j.egypro.2015.07.023⟩. ⟨hal-01188802⟩
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