Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments - Sorbonne Université Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Condensed Matter Année : 2019

Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments

Résumé

The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy.
Fichier principal
Vignette du fichier
Topological_electronic structure.pdf (8.12 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02182365 , version 1 (12-07-2019)

Identifiants

Citer

K. Hricovini, M C Richter, O. Heckmann, L Nicolaï, J.-M Mariot, et al.. Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments. Journal of Physics: Condensed Matter, 2019, 31 (28), pp.283001. ⟨10.1088/1361-648X/ab1529⟩. ⟨hal-02182365⟩
88 Consultations
315 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More