Deposition of SnO2:F Thin Films on Polycarbonate Substrates by PECVD for Antifouling Properties - Sorbonne Université Access content directly
Journal Articles Plasma Processes and Polymers Year : 2007

Deposition of SnO2:F Thin Films on Polycarbonate Substrates by PECVD for Antifouling Properties

Abstract

SnO2:F thin films were deposited on polycarbonate and glass substrates by RF capacitively coupled plasma enhanced chemical vapor deposition (PECVD) using a mixture of tetramethyltin (TMT) [Sn(CH3)4], argon, oxygen as precursors. The effects of the substrate temperature, deposition time and doping on the resistivity and the morphology of the films have been studied. The as-deposited films appear to have higher carrier mobilities than amorphous ones, in the range of 5 and 7.5 cm2 · V−1 · s−1, which could be explained by the presence of nanocrystallites. In order to understand the nanostructure of the films, we studied the formation of nanoparticles and dust particles in the discharge. Finally, we have shown that the incorporation of less than 3% of F in the tin oxide layer could decrease the resistivity down to 3 · 10−3 Ω · cm.

Dates and versions

hal-04145938 , version 1 (29-06-2023)

Identifiers

Cite

Marie Jubault, Jerome Pulpytel, Hubert Cachet, Laifa Boufendi, Farzaneh Arefi-Khonsari. Deposition of SnO2:F Thin Films on Polycarbonate Substrates by PECVD for Antifouling Properties. Plasma Processes and Polymers, 2007, 4 (S1), pp.S330-S335. ⟨10.1002/ppap.200730903⟩. ⟨hal-04145938⟩
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