SnO2:F thin films were deposited on polycarbonate and glass substrates by RF capacitively coupled plasma enhanced chemical vapor deposition (PECVD) using a mixture of tetramethyltin (TMT) [Sn(CH3)4], argon, oxygen as precursors. The effects of the substrate temperature, deposition time and doping on the resistivity and the morphology of the films have been studied. The as-deposited films appear to have higher carrier mobilities than amorphous ones, in the range of 5 and 7.5 cm2 · V−1 · s−1, which could be explained by the presence of nanocrystallites. In order to understand the nanostructure of the films, we studied the formation of nanoparticles and dust particles in the discharge. Finally, we have shown that the incorporation of less than 3% of F in the tin oxide layer could decrease the resistivity down to 3 · 10−3 Ω · cm.