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Journal Articles Applied physics. A, Materials science & processing Year : 2002

Anisotropy of atomic bonds formed by p-type dopants in bulk GaN crystals

Abstract

The anisotropy of atomic bonds formed by acceptor dopants with nitrogen in bulk wurtzite GaN crystals was studied by means of linearly polarized synchrotron radiation used in measurements of X-ray-absorption spectra for the K-edgeof Mg and Zn dopants. These spectra correspond to i) a single acceptor N bond along the c-axis and ii) three bonds realized with N atoms occupying the ab-plane perpendicular to the c-axis. The Zn dopant formed resonant spectra similar to that characteristic for Ga cations. In the case of the Mg dopant, similarity to Ga cations was observed for triple bonds in the ab-plane, only.

Dates and versions

hal-04238567 , version 1 (12-10-2023)

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K. Lawniczak-Jablonska, T. Suski, I. Gorczyca, N.E. Christensen, J. Libera, et al.. Anisotropy of atomic bonds formed by p-type dopants in bulk GaN crystals. Applied physics. A, Materials science & processing, 2002, 75 (5), pp.577-583. ⟨10.1007/s003390101032⟩. ⟨hal-04238567⟩
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