Hexagonal cadmium chalcogenide thin films prepared by electrodeposition from near-boiling aqueous solutions - Sorbonne Université
Article Dans Une Revue Applied Surface Science Année : 1997

Hexagonal cadmium chalcogenide thin films prepared by electrodeposition from near-boiling aqueous solutions

Résumé

Thin, n-type, CdSe and CdSexTe1−x semiconductive films were prepared by cathodic electrodeposition onto titanium electrodes. An electrochemical cell was specially designed in order to perform electrodeposition in a near-boiling aqueous-ethyleneglycol bath at a temperature of approximately 110°C. The composition of the as-grown films, their crystal structure, morphology and band-gap width were studied as a function of the deposition potential and chalcogen ion concentration. It is shown that high temperatures have a positive effect on the crystal quality and the photoresponse stability of cadmium chalcogenide thin films even by employing electrolytes rather concentrated in selenous acid. Under specific conditions, a small shift in deposition potential brings about a complete phase transformation of the CdSe layers. In this manner, the described method enables the preparation of hexagonal CdSe deposits.

Domaines

Chimie

Dates et versions

hal-04370803 , version 1 (03-01-2024)

Identifiants

Citer

M. Bouroushian, Z. Loizos, N. Spyrellis, Georges Maurin. Hexagonal cadmium chalcogenide thin films prepared by electrodeposition from near-boiling aqueous solutions. Applied Surface Science, 1997, 115 (2), pp.103-110. ⟨10.1016/S0169-4332(97)80191-2⟩. ⟨hal-04370803⟩
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