A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

Jiajia Chen; Shiyou Yang; Zhuoxiang Ren

doi:10.1109/TMAG.2019.2946283

Journal Articles IEEE Transactions on Magnetics Year : 2020

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

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Jiajia Chen

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Shiyou Yang

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PersonId : 1353330
ORCID : 0000-0002-8933-7034

Zhuoxiang Ren

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PersonId : 977337
IdHAL : 417917
ORCID : 0000-0003-4700-8969
IdRef : 079712193

Sorbonne Université

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Engineering Sciences [physics]

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https://hal.sorbonne-universite.fr/hal-04462006

Submitted on : Friday, February 16, 2024-1:24:02 PM

Last modification on : Monday, February 19, 2024-3:34:32 AM

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hal-04462006 , version 1 (16-02-2024)

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HAL Id : hal-04462006 , version 1
DOI : 10.1109/TMAG.2019.2946283

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Jiajia Chen, Shiyou Yang, Zhuoxiang Ren. A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor. IEEE Transactions on Magnetics, 2020, 56 (2), pp.1-4. ⟨10.1109/TMAG.2019.2946283⟩. ⟨hal-04462006⟩

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A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

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