Round table discussion : After the lecture of Professor Heusler, the discussion was opened for all the attendants. The comment of each speaker can be summarized as follows:
Résumé
M. F r o m e n t ( P i e r r e and Marie Curie Univ., F r a n c e ) expressed his regret at
the situation that the round table discussion on semiconductors was held in
another room at the same time, and added the following point: all problems of the
Si-SiO2 system are in one or two layers in the surface film. In particular,
modification of the surface layer greatly changes the properties: a monolayer of
metal deposition stabilizes unstable GaAs. We may be able to change the
property of passive films by modification, and hence we should pay attention to
the possibility of modifying the interface which is in contact with aggressive
media.