Semiconducting CdSex, Te1−x thin films prepared by electrodeposition - Sorbonne Université
Article Dans Une Revue Journal of electroanalytical chemistry and interfacial electrochemistry Année : 1989

Semiconducting CdSex, Te1−x thin films prepared by electrodeposition

Résumé

CdTe, CdSe and CdSexTe1−x semiconducting compounds were prepared by cathodic electrodeposition from an acid sulphate solution containing TeO2 and H2SeO3 in various amounts. The composition of the layers, their crystal structure, morphology, band-gap width and their photoresponse in a photoelectrochemical (PEC) cell were investigated as functions of the electrolyte composition and the deposition potential. It is shown that smooth crystallized CdSexTe1−x thin films can be obtained only for small concentrations of H2SeO3 in the bath and in a restricted potential range corresponding to the under-potential deposition of cadmium.

Domaines

Chimie

Dates et versions

hal-04609092 , version 1 (12-06-2024)

Identifiants

Citer

Z. Loizos, N. Spyrellis, Georges Maurin, Didier Pottier. Semiconducting CdSex, Te1−x thin films prepared by electrodeposition. Journal of electroanalytical chemistry and interfacial electrochemistry, 1989, 269 (2), pp.399-410. ⟨10.1016/0022-0728(89)85147-2⟩. ⟨hal-04609092⟩
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