Electrochemical behaviour of transparent heavily doped SnO2 electrodes - Sorbonne Université
Article Dans Une Revue Journal of electroanalytical chemistry and interfacial electrochemistry Année : 1989

Electrochemical behaviour of transparent heavily doped SnO2 electrodes

Résumé

A model for the charge transfer involving a tunnelling process and considering the semiconductor character of SnO2 accounts well for the shape of the cd-η curves obtained for as-sprayed as well as for Ir-grafted SnO2. The role of Ir aggregates (1016 atoms cm−2 from Rutherford backscattering; 10–20% surface coverage from TEM observations) is two-fold: (i) to create a high density of surface states which freezes the band bending inside the film; and (ii) to increase the degeneracy of the SnO2 material at the very surface (bulk carrier concentration: 2.2 ×1020 cm−3), “short-circuiting” the tunnelling process. Then after Ir grafting, the relevant phenomenon is rather to replace the slow kinetics at bare SnO2 by a faster transfer rate at the metal-covered surface.

Domaines

Chimie

Dates et versions

hal-04609111 , version 1 (12-06-2024)

Identifiants

Citer

Janine Bruneaux, Hubert Cachet, Michel Froment, Jean Amblard, M. Mostafavi. Electrochemical behaviour of transparent heavily doped SnO2 electrodes. Journal of electroanalytical chemistry and interfacial electrochemistry, 1989, 269 (2), pp.375-387. ⟨10.1016/0022-0728(89)85145-9⟩. ⟨hal-04609111⟩
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