Photoelectrochemical behaviour of GaAs modified by electrodeposition of heteropolyanions - Sorbonne Université
Article Dans Une Revue Electrochimica Acta Année : 1988

Photoelectrochemical behaviour of GaAs modified by electrodeposition of heteropolyanions

Philippe Allongue
  • Fonction : Auteur
N.A. Yao
  • Fonction : Auteur

Résumé

A reductive deposition of 18-tungsto-diphosphate heteropolyanions (HPA) P2W18O6−62 is performed at n and p-GaAs surfaces. It is found by electrical measurements (I–V, impedance) and surface observations (SEM, TEM) that the treatment is more efficient and durable when it is performed at pH = 0. Photocapacitance measurements in that case reveal that the HPA surface modification induces surface states in the lower and the upper part of the band gap of GaAs. Such a distribution is able to explain both the observed improved H2 evolution at n and p-GaAs and the better stability of photoanodes.

Domaines

Chimie

Dates et versions

hal-04625258 , version 1 (26-06-2024)

Identifiants

Citer

Philippe Allongue, Hubert Cachet, M. Fournier, N.A. Yao. Photoelectrochemical behaviour of GaAs modified by electrodeposition of heteropolyanions. Electrochimica Acta, 1988, 33 (5), pp.693-699. ⟨10.1016/0013-4686(88)80069-0⟩. ⟨hal-04625258⟩
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