Flatband potential shift of n-type GaAs in CH3CN containing different redox reagents - Sorbonne Université
Journal Articles Journal of electroanalytical chemistry and interfacial electrochemistry Year : 1987

Flatband potential shift of n-type GaAs in CH3CN containing different redox reagents

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https://hal.sorbonne-universite.fr/hal-04642710

Submitted on : Wednesday, July 10, 2024-8:40:02 AM

Last modification on : Saturday, July 13, 2024-3:11:52 AM

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hal-04642710 , version 1 (10-07-2024)

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N. Gabouze, B. Fotouhi, O. Gorochov, Hubert Cachet, N.A. Yao. Flatband potential shift of n-type GaAs in CH3CN containing different redox reagents. Journal of electroanalytical chemistry and interfacial electrochemistry, 1987, 237 (2), pp.289-293. ⟨10.1016/0022-0728(87)85242-7⟩. ⟨hal-04642710⟩

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