Photocapacitance study of n‐GaAs/electrolyte interfaces
Résumé
The electrochemical photocapacitance spectroscopy (EPS) is used to determine the interface state distribution at n‐GaAs/aqueous electrolyte junctions. Two states ( E c — 1.30eV and E c — 1.05 eV) are found to be related to corrosion of GaAs. It is also shown that ruthenium induces additional states 0.2 eV above the valence band. A new insight of its effect on the stabilization of GaAs is given.