Photocapacitance study of n‐GaAs/electrolyte interfaces - Sorbonne Université
Article Dans Une Revue Berichte der Bunsengesellschaft für physikalische Chemie Année : 1987

Photocapacitance study of n‐GaAs/electrolyte interfaces

Philippe Allongue
  • Fonction : Auteur

Résumé

The electrochemical photocapacitance spectroscopy (EPS) is used to determine the interface state distribution at n‐GaAs/aqueous electrolyte junctions. Two states ( E c — 1.30eV and E c — 1.05 eV) are found to be related to corrosion of GaAs. It is also shown that ruthenium induces additional states 0.2 eV above the valence band. A new insight of its effect on the stabilization of GaAs is given.

Domaines

Chimie

Dates et versions

hal-04643281 , version 1 (10-07-2024)

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Citer

Philippe Allongue, Hubert Cachet. Photocapacitance study of n‐GaAs/electrolyte interfaces. Berichte der Bunsengesellschaft für physikalische Chemie, 1987, 91 (4), pp.386-390. ⟨10.1002/bbpc.19870910430⟩. ⟨hal-04643281⟩
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