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Article Dans Une Revue Applied Physics Letters Année : 2013

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Résumé

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.
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Dates et versions

hal-00861768 , version 1 (27-05-2022)

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Kian Hua Tan, Sonn Fatt Yoon, Satrio Wicaksono, Wan Khai Loke, D. S. Li, et al.. Low temperature grown GaNAsSb: A promising material for photoconductive switch application. Applied Physics Letters, 2013, 103 (11), pp.111113. ⟨10.1063/1.4820797⟩. ⟨hal-00861768⟩
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