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Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Abstract : We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.
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https://hal.sorbonne-universite.fr/hal-00861768
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Submitted on : Friday, September 13, 2013 - 2:16:22 PM
Last modification on : Friday, January 7, 2022 - 3:39:35 PM

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Kian Hua Tan, Sonn Fatt Yoon, Satrio Wicaksono, Wan Khai Loke, D. S. Li, et al.. Low temperature grown GaNAsSb: A promising material for photoconductive switch application. Applied Physics Letters, American Institute of Physics, 2013, 103 (11), pp.111113. ⟨10.1063/1.4820797⟩. ⟨hal-00861768⟩

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