Low temperature grown GaNAsSb: A promising material for photoconductive switch application

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.

Mots clés

molecular beam epitaxial growth semiconductor epitaxial layers semiconductor growth carrier lifetime dark conductivity wide band gap semiconductors III-V semiconductors gallium compounds gallium arsenide electrical resistivity photoconducting switches

Domaines

Electromagnétisme

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Tan_2013_1.4820797.pdf (767)

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https://hal.sorbonne-universite.fr/hal-00861768

Soumis le : vendredi 27 mai 2022-14:37:39

Dernière modification le : mardi 8 octobre 2024-13:00:04

Archivage à long terme le : mardi 30 août 2022-10:24:29

Dates et versions

hal-00861768 , version 1 (27-05-2022)

Identifiants

HAL Id : hal-00861768 , version 1
DOI : 10.1063/1.4820797

Citer

Kian Hua Tan, Sonn Fatt Yoon, Satrio Wicaksono, Wan Khai Loke, D. S. Li, et al.. Low temperature grown GaNAsSb: A promising material for photoconductive switch application. Applied Physics Letters, 2013, 103 (11), pp.111113. ⟨10.1063/1.4820797⟩. ⟨hal-00861768⟩

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