Effect of mechanical stresses on graphene-based devices - Sorbonne Université Access content directly
Journal Articles International Journal of Numerical Modeling Year : 2017

Effect of mechanical stresses on graphene-based devices


In this work, we analyse the effect of mechanical stresses on graphene devices for application in flexible electronics. The possible Schottky contacts in the transistor are modeled through suitable transmission coefficients describing the tunnelling through the electrostatic potential along the graphene channel. The surface potential is determined by imposing an equality between the charges computed with a micro-and a macro-model. All these computation tools are explicitly dependent on the choice of geometrical parameters, thus allowing the description of uniform geometrical deformations due to strains along a given direction. Numerical results are computed and discussed.
Fichier principal
Vignette du fichier
01551820.pdf (924.88 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-01551820 , version 1 (12-03-2020)



Yi Zheng, Guido Valerio, Zhuoxiang Ren. Effect of mechanical stresses on graphene-based devices. International Journal of Numerical Modeling, 2017, 6, pp.1 - 11. ⟨10.1002/jnm.2233⟩. ⟨hal-01551820⟩
40 View
90 Download



Gmail Facebook X LinkedIn More